The U of A Power Group is thrilled to announce the successful conclusion of the eighth annual SiC+X Materials and Devices Workshop, held on Aug. 12-13. This year's event brought together a dynamic mix of over 120 attendees from different states and countries, underscoring the workshop's significance as a global forum for cutting-edge research in silicon carbide (SiC) and wide bandgap materials. This marks a substantial increase from last year's event, which saw approximately 60 registered attendees, highlighting the growing interest and impact of this workshop in the field of silicon carbide and wide bandgap materials.

Led by workshop chair Zhong Chen, associate professor of electrical engineering, along with Benoit Hamelin, workshop co-chair, Engenius Micro LLC; Philip Feng, technical program chair, University of Florida; and C. Kavir Dass, technical program co-chair, Air Force Research Laboratory; the workshop featured an impressive lineup of four keynote speakers and 31 invited speakers. These experts shared their latest findings and insights across various topics, ranging from innovative SiC material growth techniques to emerging applications in quantum technologies.

One of the highlights of this year's workshop was the update and tour of the construction of the new Multi-User Silicon Carbide Research and Fabrication Facility at the U of A. This facility, which is set to become a cornerstone for SiC research, sparked considerable excitement among attendees, who were eager to see how it will shape the future of the field.

The workshop kicked off with a networking dinner on Aug. 11, where attendees had the opportunity to make new connections and renew old ones. This collaborative spirit carried over into the sessions and roundtable discussions, where participants explored the frontiers of SiC technology and identified new avenues for research and development. 

Attendees praised the workshop for its comprehensive program and high-caliber presentations. This event is a pivotal gathering for those at the forefront of SiC research, offering unparalleled collaboration and knowledge exchange opportunities.

The U of A Power Group and the SiC+X Workshop Committee extends its deepest appreciation to all sponsors that made this conference possible:

•  IEEE Power Electronics Society
• Oxford Instruments
• Multi-User Silicon Carbide Research and Fabrication Facility
• Veeco
• Mitsuboshi Diamond Industrial Co. LTD.
• ASM
• Nissin ION Equipment
• Rigaku
• Micromachines

The U of A Power Group and the SiC+X Workshop Committee would also like to thank all speakers, participants and organizers who contributed to the success of this workshop. We eagerly anticipate next year's event, which promises further to push the boundaries of silicon carbide and related technologies.