International Workshop on Bismuth to Be Held on Campus

Photo Submitted

The element bismuth has possible applications in the electronics field

Next week, researchers from around the world will gather at the University of Arkansas to discuss bismuth, an element that could be used in semiconductors and optoelectronics. The discussion will be part of the fourth International Workshop on Bismuth Containing Semiconductors. Until recently, not much research has been done on the characterization and uses of bismuth, but Shui-Quin "Fisher" Yu, assistant professor of electrical engineering and the organizer of the conference, explained that this has been changing.

"In this year's program, we are glad to see the transition of research from early material development to the demonstration of some first prototype devices including GaAsBi lasers and photodetectors," said Yu.

The following conference sessions will be held at the Chancellor Hotel in the Bella Vista room. They are open to the public, and interested faculty and student are welcome to attend. More information can be found at bismides.net.

Monday, July 15

• 9-10:20 a.m. — I – Material Growth and Characterization – I
• 10:40 a.m. to noon — II – Bismide alloys for Infrared Device Applications – I
• 1:20-2:40 p.m. — III – Bismide alloys for Infrared Device Applications – II
• 3-4:20 p.m. — IV – Bismide alloys for Infrared Device Applications – III
• 4:40-6:20 p.m. — V – Ordering, Surface, and Defect Investigations – I

Tuesday, July 16

• 8:40-10:20 a.m. — VI – Ordering, Surface, and Defect Investigations – II
• 10:40 a.m. to noon — VII – Material Growth and Characterization – II
• 1:20-2:40 p.m. — VIII – Optical Properties of GaAsBi
• 3-3:40 p.m. — VIII – Optical Properties of GaAsBi (continued)

Wednesday, July 17

• 8:40-10:20 a.m. — IX – III-V-Bi alloys on InP and GaSb substrates with Vanishing Bandgaps – I
• 10:40 a.m. to noon — X – III-V-Bi alloys on InP and GaSb substrates with Vanishing Bandgaps – II

Several of the talks will highlight research results completed at the Institute for Nanoscience & Engineering's molecular beam epitaxy facility. This research is a collaboration between the groups of Yu and Greg Salamo, Joe N. Basore Professor in Nanotechnology and Innovation in the J. William Fulbright College of Arts and Sciences. These groups already have significant achievements in the field of bismuth and the Institute  will soon have additional growth capability.

Sponsors for the conference include the National Science Foundation, the University of Arkansas, the GREEN Center, Osemi, Wafer Technology Ltd. Faculty and staff from the College of Engineering, the William J. Fulbright College of Arts and Sciences and the Institute for Nanoscience and Engineering have been instrumental in organizing the conference.